公开(公告)号：US09484402B2

公开(公告)日：2016-11-01

申请号：US14662743

申请日：2015-03-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ming Cai ,  Dechao Guo ,  Liyang Song ,  Chun-chen Yeh

IPC: H01L29/06 ,  H01L21/762 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L29/517 ,  H01L29/7846

Abstract: A method is disclosed for forming a semiconductor device. A first opening is formed for an STI on a semiconductor substrate and a first process is performed to deposit first oxide into the first opening. A second opening is formed to remove a portion of the first oxide from the first opening and second process(es) is/are performed to deposit second oxide into the second opening and over a remaining portion of the first oxide. A portion of the semiconductor device is formed over a portion of a surface of the second oxide. A semiconductor device includes an STI including a first oxide formed in a lower portion of a trench of the STI and a second oxide formed in an upper portion of the trench and above the first oxide. The semiconductor device includes a portion of the semiconductor device formed over a portion of the second oxide.