Invention Grant
- Patent Title: Back-end transistors with highly doped low-temperature contacts
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Application No.: US14720328Application Date: 2015-05-22
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Publication No.: US09484430B2Publication Date: 2016-11-01
- Inventor: Wilfried E. Haensch , Bahman Hekmatshoar-Tabari , Ali Khakifirooz , Tak H. Ning , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Michael LeStrange
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L29/66 ; H01L29/78 ; H01L21/8238 ; H01L29/786 ; H01L21/02 ; H01L21/225 ; H01L29/40 ; H01L29/417 ; H01L21/265 ; H01L29/08

Abstract:
A back end of line device and method for fabricating a transistor device include a substrate having an insulating layer formed thereon and a channel layer formed on the insulating layer. A gate structure is formed on the channel layer. Dopants are implanted into an upper portion of the channel layer on opposite sides of the gate structure to form shallow source and drain regions using a low temperature implantation process. An epitaxial layer is selectively grown on the shallow source and drain regions to form raised regions above the channel layer and against the gate structure using a low temperature plasma enhanced chemical vapor deposition process, wherein low temperature is less than about 400 degrees Celsius.
Public/Granted literature
- US20150255574A1 BACK-END TRANSISTORS WITH HIGHLY DOPED LOW-TEMPERATURE CONTACTS Public/Granted day:2015-09-10
Information query
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