Invention Grant
- Patent Title: Via formation for cross-point memory
-
Application No.: US13870434Application Date: 2013-04-25
-
Publication No.: US09484534B2Publication Date: 2016-11-01
- Inventor: Stephen Tang
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L45/00 ; H01L27/10 ; G11C13/00 ; H01L23/48 ; H01L27/24
Abstract:
Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.
Public/Granted literature
- US20130235655A1 VIA FORMATION FOR CROSS-POINT MEMORY Public/Granted day:2013-09-12
Information query
IPC分类:
