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    APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME
    2.
    发明申请
    APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME 审中-公开

    公开(公告)号：US20190325957A1

    公开(公告)日：2019-10-24

    申请号：US16455561

    申请日：2019-06-27

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Innocenzo Tortorelli ,  Stephen Tang ,  Christina Papagianni

    IPC: G11C13/00 ,  G11C11/56

    Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

    Apparatuses and methods including memory and operation of same
    3.
    发明授权
    Apparatuses and methods including memory and operation of same 有权

    公开(公告)号：US10418102B2

    公开(公告)日：2019-09-17

    申请号：US16137950

    申请日：2018-09-21

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Innocenzo Tortorelli ,  Stephen Tang ,  Christina Papagianni

    IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56

    Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

    APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME
    4.
    发明申请
    APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME 审中-公开

    公开(公告)号：US20190027218A1

    公开(公告)日：2019-01-24

    申请号：US16137950

    申请日：2018-09-21

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Innocenzo Tortorelli ,  Stephen Tang ,  Christina Papagianni

    IPC: G11C13/00 ,  G11C11/56

    Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

    APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME
    7.
    发明申请
    APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME 有权

    公开(公告)号：US20220013173A1

    公开(公告)日：2022-01-13

    申请号：US17443203

    申请日：2021-07-22

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Innocenzo Tortorelli ,  Stephen Tang ,  Christina Papagianni

    IPC: G11C13/00 ,  G11C11/56

    Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

    APPARATUSES, DEVICES AND METHODS FOR SENSING A SNAPBACK EVENT IN A CIRCUIT
    10.
    发明申请
    APPARATUSES, DEVICES AND METHODS FOR SENSING A SNAPBACK EVENT IN A CIRCUIT 审中-公开

    公开(公告)号：US20190013067A1

    公开(公告)日：2019-01-10

    申请号：US16128241

    申请日：2018-09-11

    Applicant: Micron Technology, Inc.

    Inventor： Jeremy Miles Hirst ,  Hernan A. Castro ,  Stephen Tang

    IPC: G11C13/00 ,  G11C7/12 ,  G11C7/06

    Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

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