Invention Grant
- Patent Title: Linear resistor with high resolution and bandwidth
- Patent Title (中): 具有高分辨率和带宽的线性电阻
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Application No.: US13719527Application Date: 2012-12-19
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Publication No.: US09484888B2Publication Date: 2016-11-01
- Inventor: Yong Yang , Zuoguo Wu
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03H11/24 ; H03F3/45
Abstract:
Described is an apparatus which comprises: a first voltage follower; a second voltage follower; and a pass-gate including a p-type transistor in parallel to an n-type transistor, wherein gate terminal of the p-type transistor is controlled by an output of the first voltage follower, and wherein gate terminal of the n-type transistor is controlled by an output of the second voltage follower.
Public/Granted literature
- US20140167821A1 LINEAR RESISTOR WITH HIGH RESOLUTION AND BANDWIDTH Public/Granted day:2014-06-19
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