Invention Grant
- Patent Title: Metal capping process and processing platform thereof
- Patent Title (中): 金属封盖工艺及其加工平台
-
Application No.: US14155695Application Date: 2014-01-15
-
Publication No.: US09487864B2Publication Date: 2016-11-08
- Inventor: Chih-Chien Chi , Szu-Ping Tung , Huang-Yi Huang , Ching-Hua Hsieh
- Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/40
- IPC: H01L29/40 ; C23C16/50 ; H01L21/67 ; H01L21/768
Abstract:
Before depositing a metal capping layer on a metal interconnect in a damascene structure, a remote plasma is used to reduce native oxide formed on the metal interconnect. Accordingly, a remote plasma reducing chamber is integrated in a processing platform for depositing a metal capping layer.
Public/Granted literature
- US20150200132A1 Metal Capping Process And Processing Platform Thereof Public/Granted day:2015-07-16
Information query
IPC分类:
