Invention Grant
- Patent Title: Magnetic tunnel junction resistance comparison based physical unclonable function
- Patent Title (中): 基于磁隧道结电阻比较的物理不可克隆功能
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Application No.: US14555434Application Date: 2014-11-26
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Publication No.: US09489999B2Publication Date: 2016-11-08
- Inventor: Brian Marc Rosenberg , Xiaochun Zhu , Xu Guo
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G09C1/00 ; H04L9/08 ; H04L9/32 ; G11C16/20
Abstract:
A method includes coupling a first magnetic tunnel junction (MTJ) element and a second MTJ element to a comparison circuit. The method also includes comparing, at the comparison circuit, a first resistance of the first MTJ element to a second resistance of the second MTJ element. The method further includes generating a first physical unclonable function (PUF) output bit based on a result of comparing the first resistance to the second resistance.
Public/Granted literature
- US20160148666A1 MAGNETIC TUNNEL JUNCTION RESISTANCE COMPARISON BASED PHYSICAL UNCLONABLE FUNCTION Public/Granted day:2016-05-26
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