Invention Grant
US09490223B2 Structure to prevent deep trench moat charging and moat isolation fails
有权
结构防止深沟槽护城河充电和护城河隔离失效
- Patent Title: Structure to prevent deep trench moat charging and moat isolation fails
- Patent Title (中): 结构防止深沟槽护城河充电和护城河隔离失效
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Application No.: US14566773Application Date: 2014-12-11
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Publication No.: US09490223B2Publication Date: 2016-11-08
- Inventor: Kangguo Cheng , Joseph Ervin , Juntao Li , Chengwen Pei , Geng Wang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L23/00 ; H01L29/06 ; H01L21/762

Abstract:
A semiconductor structure is provided that includes a semiconductor on insulator (SOI) substrate comprising a bottom semiconductor layer, an epitaxial semiconductor layer present on the bottom semiconductor layer, a buried insulator layer present on the epitaxial semiconductor layer, and a top semiconductor layer present on the buried insulator layer. A deep trench moat (DTMOAT) is disposed in the SOI substrate and has a bottom surface contacting a dopant region of the bottom semiconductor layer. A moat contact electrically connecting the DTMOAT to the epitaxial semiconductor layer of the SOI substrate. Charges accumulated in the DTMOAT can be discharged through the heavily doped epitaxial semiconductor layer to ground, thus preventing the DTMOAT failure caused by the process-induced charge accumulation.
Public/Granted literature
- US20160172314A1 STRUCTURE TO PREVENT DEEP TRENCH MOAT CHARGING AND MOAT ISOLATION FAILS Public/Granted day:2016-06-16
Information query
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