Invention Grant
US09490340B2 Methods of forming nanowire devices with doped extension regions and the resulting devices
有权
形成具有掺杂延伸区域的纳米线器件的方法和所得到的器件
- Patent Title: Methods of forming nanowire devices with doped extension regions and the resulting devices
- Patent Title (中): 形成具有掺杂延伸区域的纳米线器件的方法和所得到的器件
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Application No.: US14308138Application Date: 2014-06-18
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Publication No.: US09490340B2Publication Date: 2016-11-08
- Inventor: Shao-Ming Koh , Guillaume Bouche , Jing Wan , Andy C. Wei
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/06 ; H01L21/265 ; H01L21/223
Abstract:
A method of forming a nanowire device includes patterning a plurality of semiconductor material layers such that each layer has first and second exposed end surfaces. The method further includes forming doped extension regions in the first and second exposed end surfaces of the semiconductor material layers. The method further includes, after forming the doped extension regions, forming epi semiconductor material in source and drain regions of the device.
Public/Granted literature
- US20150372115A1 METHODS OF FORMING NANOWIRE DEVICES WITH DOPED EXTENSION REGIONS AND THE RESULTING DEVICES Public/Granted day:2015-12-24
Information query
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