Invention Grant
- Patent Title: Carrier and method of fabricating semiconductor device using the same
- Patent Title (中): 使用其制造半导体器件的载体和方法
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Application No.: US14505774Application Date: 2014-10-03
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Publication No.: US09496163B2Publication Date: 2016-11-15
- Inventor: HyungJun Jeon , Byung Lyul Park , Jisoon Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2013-0150777 20131205
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/683 ; H01L21/304 ; H01L21/768
Abstract:
Provided are a carrier and a method of fabricating a semiconductor device using the same. The carrier may include a recess region provided adjacent to an edge thereof. The recess region may be configured to confine an adhesive layer within a desired region including the recess region. The recess region makes it possible to reduce a process failure in a process of fabricating a semiconductor device.
Public/Granted literature
- US20150162235A1 CARRIER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2015-06-11
Information query
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