Invention Grant
- Patent Title: Thin film transistor array panel and manufacturing method thereof
- Patent Title (中): 薄膜晶体管阵列面板及其制造方法
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Application No.: US14552619Application Date: 2014-11-25
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Publication No.: US09496289B2Publication Date: 2016-11-15
- Inventor: Jung Ouck Ahn , Seung Sok Son
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2014-0095095 20140725
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
A thin film transistor array panel includes: a substrate; a gate line and a common voltage line electrically separated from each other and elongated parallel with each other on the substrate; a gate insulating layer on the gate line and the common voltage line; a first passivation layer on the gate insulating layer; a common electrode on the first passivation layer; a second passivation layer on the common electrode; and a pixel electrode and a connection member on the second passivation layer and electrically separated from each other. The connection member is elongated in a horizontal direction parallel with the gate line and connects the common voltage line and the common electrode to each other.
Public/Granted literature
- US20160027802A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-01-28
Information query
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