The present disclosure relates to a Fin field effect transistor (FinFET) device having epitaxial enhancement structures, and an associated method of fabrication. In some embodiments, the FinFET device has a semiconductor substrate having a plurality of isolation regions overlying the semiconductor substrate. A plurality of three-dimensional fins protrude from a top surface of the semiconductor substrate at locations between the plurality of isolation regions. Respective three-dimensional fins have an epitaxial enhancement structure that introduces a strain into the three-dimensional fin. The epitaxial enhancement structures are disposed over a semiconductor material within the three-dimensional fin at a position that is more than 10 nanometers above a bottom of an adjacent isolation region. Forming the epitaxial enhancement structure at such a position provides for sufficient structural support to avoid isolation region collapse.