公开(公告)号：US09991307B2

公开(公告)日：2018-06-05

申请号：US14713172

申请日：2015-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Horng Huei Tseng ,  Chao-Hsiung Wang ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Tzu-Hsuan Hsu ,  Yung-Lung Hsu

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0232 ,  H04N9/04 ,  H04N5/335

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.

公开(公告)号：US20170294391A1

公开(公告)日：2017-10-12

申请号：US15631392

申请日：2017-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Syuan Lin ,  Jiun-Lei Jerry Yu ,  Ming-Cheng Lin ,  Hsin-Chieh Huang ,  Chao-Hsiung Wang

IPC: H01L23/58 ,  H01L29/778 ,  H01L29/40 ,  H01L21/78 ,  H01L29/20

CPC classification number: H01L23/585 ,  H01L21/78 ,  H01L21/784 ,  H01L23/5226 ,  H01L23/562 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7786 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments relate to a die that has been formed by improved dicing techniques. The die includes a substrate which includes upper and lower substrate surfaces with a vertical substrate sidewall extending therebetween. The vertical substrate sidewall corresponds to an outermost edge of the substrate. A device layer is arranged over the upper substrate surface. A crack stop is arranged over an upper surface of the device layer and has an outer perimeter that is spaced apart laterally from the vertical substrate sidewall. The die exhibits a tapered sidewall extending downward through at least a portion of the device layer to meet the vertical substrate sidewall.

公开(公告)号：US20160307943A1

公开(公告)日：2016-10-20

申请号：US14713172

申请日：2015-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Horng Huei Tseng ,  Chao-Hsiung Wang ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Tzu-Hsuan Hsu ,  Yung-Lung Hsu

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.

Abstract translation: 提供具有平坦的下表面的电介质栅格开口的背面照明（BSI）图像传感器。 像素传感器布置在半导体衬底内。 金属网格布置在像素传感器上方并且限定金属网格开口的侧壁。 介电栅格布置在金属栅格上方并限定电介质栅格开口的侧壁。 覆盖层布置在金属网格上方，并且限定电介质网格开口的平面下表面。

公开(公告)号：US20160307941A1

公开(公告)日：2016-10-20

申请号：US14688106

申请日：2015-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Horng-Huei Tseng ,  Chao-Hsiung Wang ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Yung-Lung Hsu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: A back side illumination (BSI) image sensor with stacked grid shifting is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid segment is arranged over the pixel sensor and has a metallic grid opening therein. A center of the metallic grid opening is laterally shifted from a center of the pixel sensor. A dielectric grid segment is arranged over the metallic grid and has a dielectric grid opening therein. A center of the dielectric grid opening is laterally shifted from the center of the pixel sensor. A method for manufacturing the BSI image sensor is also provided.

Abstract translation: 提供了具有堆叠网格移位的背面照明（BSI）图像传感器。 像素传感器布置在半导体衬底内。 金属网格段布置在像素传感器的上方，并且在其中具有金属栅格开口。 金属网格开口的中心从像素传感器的中心横向偏移。 电介质栅格段布置在金属栅格上并且在其中具有电介质栅格。 电介质栅格开口的中心从像素传感器的中心横向偏移。 还提供了一种用于制造BSI图像传感器的方法。

公开(公告)号：US20160307940A1

公开(公告)日：2016-10-20

申请号：US14688084

申请日：2015-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Horng-Huei Tseng ,  Chao-Hsiung Wang ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Yung-Lung Hsu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14685

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a curved lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the curved lower surface of the dielectric grid opening. A method for manufacturing the BSI image sensor is also provided.

Abstract translation: 提供了具有弯曲下表面的电介质栅格开口的背面照明（BSI）图像传感器。 像素传感器布置在半导体衬底内。 金属网格布置在像素传感器上方并且限定金属网格开口的侧壁。 介电栅格布置在金属栅格上方并限定电介质栅格开口的侧壁。 覆盖层布置在金属网格上方，并且限定电介质网格开口的弯曲的下表面。 还提供了一种用于制造BSI图像传感器的方法。

公开(公告)号：US20160204074A1

公开(公告)日：2016-07-14

申请号：US14596326

申请日：2015-01-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Syuan Lin ,  Jiun-Lei Jerry Yu ,  Ming-Cheng Lin ,  Hsin-Chieh Huang ,  Chao-Hsiung Wang

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/58 ,  H01L29/20 ,  H01L29/78

CPC classification number: H01L23/585 ,  H01L21/78 ,  H01L21/784 ,  H01L23/5226 ,  H01L23/562 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7786 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments relate to a method of dicing a semiconductor wafer. The semiconductor wafer that includes a device structure that is formed within a device layer. The device layer is arranged within an upper surface the device layer. A crack stop is formed, which surrounds the device structure and reinforces the semiconductor wafer to prevent cracking during dicing. A laser is used to form a groove along a scribe line outside the crack stop. The groove extends completely through the device layer, and into an upper surface region of the semiconductor wafer. The semiconductor wafer is then cut along the grooved scribe line with a cutting blade to singulate the semiconductor wafer into two or more die. By extending the groove completely through the device layer, the method avoids damage to the device layer caused by the blade saw, and thus avoids an associated performance degradation of the device structure.

Abstract translation: 一些实施例涉及切割半导体晶片的方法。 该半导体晶片包括在器件层内形成的器件结构。 器件层布置在器件层的上表面内。 形成裂缝停止件，其围绕装置结构并加强半导体晶片以防止切割期间的开裂。 使用激光器沿着裂纹停止点外的划线形成凹槽。 凹槽完全延伸穿过器件层并进入半导体晶片的上表面区域。 然后用切割刀沿着带槽划线切割半导体晶片，将半导体晶片分成两个或更多个管芯。 通过将槽完全延伸穿过器件层，该方法避免了由刀片锯引起的对器件层的损坏，从而避免了器件结构的相关性能下降。

公开(公告)号：US11004886B2

公开(公告)日：2021-05-11

申请号：US15996636

申请日：2018-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Horng Huei Tseng ,  Chao-Hsiung Wang ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Tzu-Hsuan Hsu ,  Yung-Lung Hsu

IPC: H01L27/146

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.

公开(公告)号：US20200303258A1

公开(公告)日：2020-09-24

申请号：US16895345

申请日：2020-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Cheng Chiang ,  Ting-Hung Hsu ,  Chao-Hsiung Wang ,  Chi-Wen Liu

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/66 ,  H01L27/092 ,  H01L27/12 ,  H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/762

Abstract: A method includes forming Shallow Trench Isolation (STI) regions in a semiconductor substrate and a semiconductor strip between the STI regions. The method also include replacing a top portion of the semiconductor strip with a first semiconductor layer and a second semiconductor layer over the first semiconductor layer. The first semiconductor layer has a first germanium percentage higher than a second germanium percentage of the second semiconductor layer. The method also includes recessing the STI regions to form semiconductor fins, forming a gate stack over a middle portion of the semiconductor fin, and forming gate spacers on sidewalls of the gate stack. The method further includes forming fin spacers on sidewalls of an end portion of the semiconductor fin, recessing the end portion of the semiconductor fin, and growing an epitaxial region over the end portion of the semiconductor fin.

公开(公告)号：US09570493B2

公开(公告)日：2017-02-14

申请号：US14688084

申请日：2015-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Horng-Huei Tseng ,  Chao-Hsiung Wang ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Yung-Lung Hsu

IPC: H01L27/146 ,  H04N9/04 ,  H01L31/18 ,  H01L31/0232

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14685

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a curved lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the curved lower surface of the dielectric grid opening. A method for manufacturing the BSI image sensor is also provided.

Abstract translation: 提供了具有弯曲下表面的电介质栅格开口的背面照明（BSI）图像传感器。 像素传感器布置在半导体衬底内。 金属网格布置在像素传感器上方并且限定金属网格开口的侧壁。 介电栅格布置在金属栅格上方并限定电介质栅格开口的侧壁。 覆盖层布置在金属网格上方，并且限定电介质网格开口的弯曲的下表面。 还提供了一种用于制造BSI图像传感器的方法。

公开(公告)号：US11205594B2

公开(公告)日：2021-12-21

申请号：US16895345

申请日：2020-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Cheng Chiang ,  Ting-Hung Hsu ,  Chao-Hsiung Wang ,  Chi-Wen Liu

IPC: H01L29/165 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/66 ,  H01L27/092 ,  H01L27/12 ,  H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/762

Abstract: A method includes forming Shallow Trench Isolation (STI) regions in a semiconductor substrate and a semiconductor strip between the STI regions. The method also include replacing a top portion of the semiconductor strip with a first semiconductor layer and a second semiconductor layer over the first semiconductor layer. The first semiconductor layer has a first germanium percentage higher than a second germanium percentage of the second semiconductor layer. The method also includes recessing the STI regions to form semiconductor fins, forming a gate stack over a middle portion of the semiconductor fin, and forming gate spacers on sidewalls of the gate stack. The method further includes forming fin spacers on sidewalls of an end portion of the semiconductor fin, recessing the end portion of the semiconductor fin, and growing an epitaxial region over the end portion of the semiconductor fin.