发明授权
- 专利标题: Methods for the additive manufacturing of semiconductor and crystal materials
- 专利标题(中): 半导体和晶体材料的添加剂制造方法
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申请号: US14752048申请日: 2015-06-26
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公开(公告)号: US09499406B1公开(公告)日: 2016-11-22
- 发明人: Ashley C. Stowe , Douglas Speight
- 申请人: Ashley C. Stowe , Douglas Speight
- 申请人地址: US TN Oak Ridge
- 专利权人: Consolidated Nuclear Security, LLC
- 当前专利权人: Consolidated Nuclear Security, LLC
- 当前专利权人地址: US TN Oak Ridge
- 代理机构: Clements Bernard PLLC
- 代理商 Christopher L. Bernard; Lawrence A. Baratta, Jr.
- 主分类号: B01D9/00
- IPC分类号: B01D9/00 ; C01B19/00 ; C09K11/88 ; H01B1/06 ; B01J19/12 ; B01J19/08
摘要:
A method for the additive manufacturing of inorganic crystalline materials, including: physically combining a plurality of starting materials that are used to form an inorganic crystalline compound to be used as one or more of a semiconductor, scintillator, laser crystal, and optical filter; heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results. The method also includes, prior to heating or melting the successive regions of the combined starting materials using the directed heat source, heating the combined starting materials to facilitate initial reaction of the combined starting materials. The method further includes translating the combined starting materials and/or the directed heat source between successive locations. The method still further includes controlling the mechanical, electrical, photonic, and/or optical properties of the inorganic crystalline compound.