Invention Grant
- Patent Title: Method for driving memory element
- Patent Title (中): 驱动存储元件的方法
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Application No.: US13892479Application Date: 2013-05-13
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Publication No.: US09502094B2Publication Date: 2016-11-22
- Inventor: Tatsuya Onuki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2012-119709 20120525
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C14/00 ; H01L27/11 ; H01L27/12

Abstract:
To provide a memory element which keeps a stored logic state even without supply of power. To increase an effect of reducing power consumption by facilitating stop of supply of power to the memory element for a short time. Data (potential) held in a node in a logic circuit can be swiftly saved on a node where one of a source and a drain of the transistor and one electrode of the capacitor included in a memory circuit are connected by lowering a potential of the other electrode of a capacitor before a transistor is turned on. By making a potential of the other electrode of the capacitor when the transistor is in an off state higher than a potential of the other electrode of the capacitor when the transistor is in an on state, a potential of the node can be reliably held even without supply of power.
Public/Granted literature
- US20130314976A1 METHOD FOR DRIVING MEMORY ELEMENT Public/Granted day:2013-11-28
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