Invention Grant
- Patent Title: Inhibiting diffusion of elements between material layers of a layered circuit structure
- Patent Title (中): 阻止元件在分层电路结构的材料层之间的扩散
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Application No.: US14321866Application Date: 2014-07-02
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Publication No.: US09502232B2Publication Date: 2016-11-22
- Inventor: Sipeng Gu , Sandeep Gaan , Zhiguo Sun , Huang Liu , Adam Selsley
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Nathan Davis
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/321

Abstract:
Methods for fabricating a layered circuit structure are provided, which include, for instance: depositing a first material layer above a substrate, the first material layer having an oxidized upper surface; providing a second material layer over the oxidized upper surface of the first material layer; and inhibiting diffusion of one or more elements from the oxidized upper surface of the first material layer into either the first material layer or the second material layer during the providing of the second material layer over the oxidized upper surface of the first material layer. The inhibiting may include one or more of modifying a characteristic(s) of the first material layer, forming a protective layer over the oxidized upper surface of the first material layer, or altering at least one process parameter employed in providing the second material layer.
Public/Granted literature
- US20160005598A1 INHIBITING DIFFUSION OF ELEMENTS BETWEEN MATERIAL LAYERS OF A LAYERED CIRCUIT STRUCTURE Public/Granted day:2016-01-07
Information query
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