Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14594063Application Date: 2015-01-09
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Publication No.: US09502489B2Publication Date: 2016-11-22
- Inventor: Takuo Funaya , Takayuki Igarashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-009403 20140122
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L49/02 ; H01L21/66 ; H01L21/02 ; H01L21/311 ; H01L21/78 ; H01L23/522 ; H01L23/00
Abstract:
Provided is a semiconductor device having improved reliability. Over a semiconductor substrate, a first coil is formed via a first insulating film. A second insulating film is formed so as to cover the first insulating film and the first coil. Over the second insulating film, a pad is formed. Over the second insulating film, a multi-layer film having an opening exposing a part of the pad is formed. Over the multi-layer insulating film, a second coil is formed. The second coil is placed over the first coil. The second and first coils are magnetically coupled to each other. The multi-layer film includes a silicon dioxide film, a silicon nitride film over the silicon dioxide film, and a resin film over the silicon nitride film.
Public/Granted literature
- US20150206934A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-07-23
Information query
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