Invention Grant
- Patent Title: High-frequency amplifier
- Patent Title (中): 高频放大器
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Application No.: US14571929Application Date: 2014-12-16
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Publication No.: US09503035B2Publication Date: 2016-11-22
- Inventor: Tomohiko Shibuya , Atsushi Ajioka , Atsushi Tsumita , Sadaharu Yoneda
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2013-261204 20131218; JP2014-251146 20141211
- Main IPC: H03F3/68
- IPC: H03F3/68 ; H03F3/193 ; H03F3/21 ; H03F3/24 ; H03F3/195

Abstract:
There is provided a high-frequency amplifier including a divider, a plurality of amplifiers for amplifying a high-frequency signal distributed by the divider and outputting the amplified high-frequency signal, a combiner for combining amplified high-frequency signals, a base substrate, a conductor pattern that is connected to a ground end of each of the amplifiers, and a ground electrode. Each of the conductor patterns has a first conductive portion. A slot is disposed between the two conductor patterns connected to the corresponding adjacent amplifiers. Between the adjacent amplifiers, two vias are formed so that the slot is sandwiched between the vias. One of the two conductor patterns is connected to the ground electrode via one of the two vias, and the other one of the conductor patterns is connected to the ground electrode via the other one of the two vias.
Public/Granted literature
- US20150180419A1 HIGH-FREQUENCY AMPLIFIER Public/Granted day:2015-06-25
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