Invention Grant
- Patent Title: Bulk acoustic wave (BAW) device having roughened bottom side
- Patent Title (中): 具有粗糙底面的体声波（BAW）装置
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Application No.: US14692481Application Date: 2015-04-21
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Publication No.: US09503047B2Publication Date: 2016-11-22
- Inventor: Stuart M. Jacobsen , Brian Goodlin
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Tuenlap D. Chan; Frank D. Cimino
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H01L41/08 ; H01L41/047 ; H03B28/00 ; H03H9/02 ; H03H9/13
Abstract:
A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 μm root mean square (RMS).
Public/Granted literature
- US20150318461A1 BULK ACOUSTIC WAVE (BAW) DEVICE HAVING ROUGHENED BOTTOM SIDE Public/Granted day:2015-11-05
Information query
IPC分类:
