Invention Grant
- Patent Title: Optical semiconductor device
- Patent Title (中): 光半导体器件
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Application No.: US14827841Application Date: 2015-08-17
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Publication No.: US09508662B2Publication Date: 2016-11-29
- Inventor: Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-168258 20140821
- Main IPC: G02B6/12
- IPC: G02B6/12 ; H01L23/60 ; G02F1/01 ; G02F1/025 ; H01L31/02 ; H05K1/02 ; G02B6/43

Abstract:
A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.
Public/Granted literature
- US20160056115A1 OPTICAL SEMICONDUCTOR DEVICE Public/Granted day:2016-02-25
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