公开(公告)号：US10295743B2

公开(公告)日：2019-05-21

申请号：US14827779

申请日：2015-08-17

Applicant: Renesas Electronics Corporation

Inventor： Hiroyuki Kunishima ,  Yasutaka Nakashiba ,  Masaru Wakabayashi ,  Shinichi Watanuki ,  Ken Ozawa ,  Tatsuya Usami ,  Yoshiaki Yamamoto ,  Keiji Sakamoto

IPC: G02B6/12 ,  G02B6/125 ,  G02B6/136

Abstract: Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.

公开(公告)号：US09312327B2

公开(公告)日：2016-04-12

申请号：US14747891

申请日：2015-06-23

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ken Ozawa ,  Hiroyuki Kunishima

IPC: H01L27/108 ,  H01L29/94 ,  H01L49/02 ,  H01L27/06 ,  H01L23/522

CPC classification number: H01L27/10814 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/53295 ,  H01L27/0629 ,  H01L27/10855 ,  H01L28/87 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first electrode and covered with an interlayer insulating film, in which a plurality of coupling holes are formed in the interlayer insulating film and are in contact with the second electrode at the lower ends; and, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm2], the following expression (1) is satisfied. C/A≦1.98 [nF/μm2]  (1) The elution of the second electrode constituting the capacitor at the lower ends of the coupling holes is suppressed.

Abstract translation: 一种具有电容器的半导体器件，包括电耦合到晶体管的第一电极和与第一电极分离并被层间绝缘膜覆盖的第二电极，其中在层间绝缘膜中形成多个耦合孔，并且位于 在下端与第二电极接触; 并且当第二电极的电容由C [nF]表示，并且耦合孔的下端的总面积由A [μm2]表示时，满足以下表达式（1）。 C / A＆nlE; 1.98 [nF /μm2]（1）抑制了在耦合孔的下端构成电容器的第二电极的溶出。

公开(公告)号：US20160054521A1

公开(公告)日：2016-02-25

申请号：US14827779

申请日：2015-08-17

Applicant: Renesas Electronics Corporation

Inventor： Hiroyuki Kunishima ,  Yasutaka Nakashiba ,  Masaru Wakabayashi ,  Shinichi Watanuki ,  Ken Ozawa ,  Tatsuya Usami ,  Yoshiaki Yamamoto ,  Keiji Sakamoto

IPC: G02B6/125 ,  G02B6/136 ,  G02B6/293

CPC classification number: G02B6/125 ,  G02B6/136 ,  G02B2006/12061

Abstract: Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.

Abstract translation: 公开了一种可以提高光偏移精度并且抑制光传输损失的光半导体装置。 在该装置中，光学耦合区域的第一光学耦合部分的内侧表面和该区域的第二光学耦合部分的内侧表面的线边缘粗糙度增加。 这种方式使光耦合容易从第一至第二光波导。 相比之下，线边缘粗糙度降低：光耦合区域的第一光耦合部分的外侧表面; 该区域的第二光耦合部分的外侧表面; 第一光波导的一部分的两个相对的侧表面，该部分是除该区域之外的任何部分; 以及第二光波导的一部分的两个相对的侧表面，该部分是该区域以外的任何部分。

公开(公告)号：US09508662B2

公开(公告)日：2016-11-29

申请号：US14827841

申请日：2015-08-17

Applicant: Renesas Electronics Corporation

Inventor： Hiroyuki Kunishima ,  Yasutaka Nakashiba ,  Masaru Wakabayashi ,  Shinichi Watanuki ,  Ken Ozawa ,  Tatsuya Usami ,  Yoshiaki Yamamoto ,  Keiji Sakamoto

IPC: G02B6/12 ,  H01L23/60 ,  G02F1/01 ,  G02F1/025 ,  H01L31/02 ,  H05K1/02 ,  G02B6/43

CPC classification number: H01L23/60 ,  G02B6/43 ,  G02F1/0121 ,  G02F1/025 ,  G02F2201/12 ,  G02F2202/105 ,  H01L31/02002 ,  H01L2924/0002 ,  H05K1/0296 ,  H01L2924/00

Abstract: A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.

Abstract translation: 在垂直于电信号传输线的延伸方向的横截面中，电信号传输线由屏蔽部分包围，该屏蔽部分包括第一噪声切断布线，第二插塞，第一层布线，第一插塞，屏蔽半导体层 ，第一插头，第一层布线，第二插头和第二噪声切断布线，并且屏蔽部分被固定为参考电位。 因此，屏蔽部分由于影响电信号传输线的来自半导体衬底的磁场或电场的影响而阻塞噪声。

公开(公告)号：US20160056115A1

公开(公告)日：2016-02-25

申请号：US14827841

申请日：2015-08-17

Applicant: Renesas Electronics Corporation

Inventor： Hiroyuki Kunishima ,  Yasutaka Nakashiba ,  Masaru Wakabayashi ,  Shinichi Watanuki ,  Ken Ozawa ,  Tatsuya Usami ,  Yoshiaki Yamamoto ,  Keiji Sakamoto

IPC: H01L23/60 ,  H05K1/02

CPC classification number: H01L23/60 ,  G02B6/43 ,  G02F1/0121 ,  G02F1/025 ,  G02F2201/12 ,  G02F2202/105 ,  H01L31/02002 ,  H01L2924/0002 ,  H05K1/0296 ,  H01L2924/00

Abstract: A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.

Abstract translation: 提供了可以防止电信号在光半导体器件中劣化的技术。 在垂直于电信号传输线的延伸方向的横截面中，电信号传输线由屏蔽部分包围，该屏蔽部分包括第一噪声切断布线，第二插塞，第一层布线，第一插塞，屏蔽半导体层 ，第一插头，第一层布线，第二插头和第二噪声切断布线，并且屏蔽部分被固定为参考电位。 因此，屏蔽部分由于影响电信号传输线的来自半导体衬底的磁场或电场的影响而阻塞噪声。