Invention Grant
- Patent Title: Substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation
- Patent Title (中): 包括具有相同晶体取向的外延层和硅层的半导体器件的衬底
-
Application No.: US14469566Application Date: 2014-08-26
-
Publication No.: US09508799B2Publication Date: 2016-11-29
- Inventor: Wen-Yin Weng , Cheng-Tung Huang , Ya-Ru Yang , Yi-Ting Wu , Yu-Ming Lin , Jen-Yu Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L29/16 ; H01L29/165 ; H01L29/78 ; H01L29/04 ; H01L21/02
Abstract:
A method for fabricating substrate of a semiconductor device is disclosed. The method includes the steps of: providing a first silicon layer; forming a dielectric layer on the first silicon layer; bonding a second silicon layer to the dielectric layer; removing part of the second silicon layer and part of the dielectric layer to define a first region and a second region on the first silicon layer, wherein the remaining of the second silicon layer and the dielectric layer are on the second region; and forming an epitaxial layer on the first region of the first silicon layer, wherein the epitaxial layer and the second silicon layer comprise same crystalline orientation.
Public/Granted literature
Information query
IPC分类:
