Invention Grant
- Patent Title: Method of fabricating a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14749037Application Date: 2015-06-24
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Publication No.: US09508832B2Publication Date: 2016-11-29
- Inventor: Hyun Jung Lee , Bonyoung Koo , Sunjung Kim , Jongryeol Yoo , Seung Hun Lee , Poren Tang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0109653 20140822
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/308 ; H01L21/336 ; H01L29/66 ; H01L21/762 ; H01L21/8238 ; H01L21/8234
Abstract:
A method of fabricating a semiconductor device includes forming a channel layer on a substrate, forming a sacrificial layer on the channel layer, forming a hardmask pattern on the sacrificial layer, and performing a patterning process using the hardmask pattern as an etch mask to form a channel portion with an exposed top surface. The channel and sacrificial layers may be formed of silicon germanium, and the sacrificial layer may have a germanium content higher than that of the channel layer.
Public/Granted literature
- US20160056269A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2016-02-25
Information query
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