Invention Grant
US09514933B2 Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
有权
使用空间原子层沉积或脉冲化学气相沉积的薄膜沉积
- Patent Title: Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
- Patent Title (中): 使用空间原子层沉积或脉冲化学气相沉积的薄膜沉积
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Application No.: US14587131Application Date: 2014-12-31
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Publication No.: US09514933B2Publication Date: 2016-12-06
- Inventor: Yu Lei , Srinivas Gandikota , Seshadri Ganguli , Bo Zheng , Rajkumar Jakkaraju , Martin Jeff Salinas , Benjamin Schmiege
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/311 ; H01L21/3205 ; H01L21/3213 ; C23C16/455 ; H01L21/285
Abstract:
Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.
Public/Granted literature
- US20150194298A1 Film Deposition Using Spatial Atomic Layer Deposition Or Pulsed Chemical Vapor Deposition Public/Granted day:2015-07-09
Information query
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