发明授权
- 专利标题： Gate-tunable atomically-thin memristors and methods for preparing same and applications of same
- 专利标题（中）： 门可调原子薄忆阻器及其制备方法及其应用
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申请号： US15045822申请日： 2016-02-17
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公开(公告)号： US09515257B2公开(公告)日： 2016-12-06
- 发明人: Mark C. Hersam , Vinod K. Sangwan , Deep M. Jariwala , In Soo Kim , Tobin J. Marks , Lincoln J. Lauhon
- 申请人： NORTHWESTERN UNIVERSITY
- 申请人地址： US IL Evanston
- 专利权人： NORTHWESTERN UNIVERSITY
- 当前专利权人： NORTHWESTERN UNIVERSITY
- 当前专利权人地址： US IL Evanston
- 代理机构： Locke Lord LLP
- 代理商 Tim Tingkang Xia, Esq.
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/16 ; H01L27/24
摘要：
In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.
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