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1.发明授权公开(公告)号：US09929725B2
公开(公告)日：2018-03-27
申请号：US14981245
申请日：2015-12-28
发明人： Deep M. Jariwala , Vinod K. Sangwan , Weichao Xu , Hyungil Kim , Tobin J. Marks , Mark C. Hersam
CPC分类号： H03K7/06 , H01L27/283 , H01L27/286 , H01L51/0003 , H01L51/0017 , H01L51/0048 , H01L51/0545 , H01L51/0562 , H01L51/105 , H01L2251/303
摘要： Van der Waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios. The charge transport can be efficiently utilized in analog circuits such as frequency doublers and keying circuits that are widely used, for example, in telecommunication and wireless data transmission technologies.
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公开(公告)号：US11605730B2
公开(公告)日：2023-03-14
申请号：US16955268
申请日：2019-01-16
发明人： Mark C. Hersam , Vinod K. Sangwan , Megan E. Beck
IPC分类号： H01L51/05 , H01L29/76 , H01L21/02 , H01L21/78 , H01L29/24 , H01L29/45 , H01L29/51 , H01L29/66 , H01L51/00 , H01L51/10
摘要： A self-aligned short-channel SASC electronic device includes a first semiconductor layer formed on a substrate; a first metal layer formed on a first portion of the first semiconductor layer; a first dielectric layer formed on the first metal layer and extended with a dielectric extension on a second portion of the first semiconductor layer that extends from the first portion of the first semiconductor layer, the dielectric extension defining a channel length of a channel in the first semiconductor layer; and a gate electrode formed on the substrate and capacitively coupled with the channel. The dielectric extension is conformally grown on the first semiconductor layer in a self-aligned manner. The channel length is less than about 800 nm, preferably, less than about 200 nm, more preferably, about 135 nm.
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公开(公告)号：US20200083440A1
公开(公告)日：2020-03-12
申请号：US16508464
申请日：2019-07-11
发明人： Mark C. Hersam , Vinod K. Sangwan
摘要： Thermally activated memristors from solution-processed two-dimensional (2D) semiconductors, fabricating methods and applications of the same. The memristor includes a semiconductor film formed on a nanoporous membrane, and at least two electrodes spatial-apart formed on the semiconductor film and electrically coupled with the semiconductor film to define a channel in the semiconductor film between the at least two electrodes, where the channel has one or more filaments, one or more dendrite, or a combination of them formed in the semiconductor film. The underlying switching mechanism applies generally to a range of 2D semiconductors including, but not limited to, MoS2, MoSe2, WS2, ReS2, InSe, or related 2D semiconductor materials.
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公开(公告)号：US20170141333A1
公开(公告)日：2017-05-18
申请号：US15265166
申请日：2016-09-14
CPC分类号： H01L51/0587 , H01L21/02568 , H01L29/0673 , H01L29/24 , H01L29/66128 , H01L29/861 , H01L29/8611 , H01L31/0336 , H01L31/109 , H01L51/0048 , H01L51/102
摘要： A method of fabricating a diode includes forming a first semiconductor layer having a first portion and a second portion extending from the first portion on a substrate; forming first and second electrodes on the substrate, the first electrode extending over and being in contact with the first portion of the first semiconductor layer; forming an insulting film to cover the first electrode and the first portion of the first semiconductor layer; and forming a second semiconductor layer having a first portion and a second portion extending from the first portion on the substrate. The second portion of the second semiconductor layer overlapping with the second portion of the first semiconductor layer to define a vertically stacked heterojunction therewith. The first portion of the second semiconductor layer extending over and being in contact with the second electrode. Each of the first and second semiconductor layers includes an atomically thin semiconductor.
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5.发明申请SYSTEM AND METHOD FOR ANTI-AMBIPOLAR HETEROJUNCTIONS FROM SOLUTION-PROCESSED SEMICONDUCTORS 有权从解决方案处理的半导体中的抗环状异构体的系统和方法公开(公告)号：US20160204773A1
公开(公告)日：2016-07-14
申请号：US14981245
申请日：2015-12-28
发明人： Deep M. Jariwala , Vinod K. Sangwan , Weichao Xu , Hyungil Kim , Tobin J. Marks , Mark C. Hersam
CPC分类号： H03K7/06 , H01L27/283 , H01L27/286 , H01L51/0003 , H01L51/0017 , H01L51/0048 , H01L51/0545 , H01L51/0562 , H01L51/105 , H01L2251/303
摘要： Van der Waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios. The charge transport can be efficiently utilized in analog circuits such as frequency doublers and keying circuits that are widely used, for example, in telecommunication and wireless data transmission technologies.
摘要翻译： 范德华异质结延伸到半导体p型单壁碳纳米管（s-SWCNT）和n型膜，可以在晶片尺度上以高空间均匀性进行溶液处理。 所得到的大面积，低电压p-n异质结可以表现出具有高开/关比的抗双极转移特性。 电荷传输可以有效地用于诸如频率倍增器和诸如电信和无线数据传输技术中广泛使用的键控电路的模拟电路中。
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公开(公告)号：US11889775B2
公开(公告)日：2024-01-30
申请号：US16770662
申请日：2018-12-17
发明人： Vinod K. Sangwan , Hong-Sub Lee , Mark C. Hersam
CPC分类号： H10N70/253 , G11C13/0002 , H10B63/30 , H10N70/023 , H10N70/24 , H10N70/823 , H10N70/841 , H10N70/8822 , H10N70/8825 , G06N3/049 , G06N3/065 , G06N3/088
摘要： One aspect of the invention relates to a multi-terminal memtransistor. The memtransistor includes a substrate having a first surface and an opposite, second surface, a polycrystalline monolayer film formed of an atomically thin material on the first surface of the substrate, an electrode array having a plurality of electrodes spatial-apart formed on the polycrystalline monolayer film such that each pair of electrodes defines a channel in the polycrystalline monolayer film therebetween, and a gate electrode formed on the second surface of the substrate and capacitively coupled with the channel. The polycrystalline monolayer film contains grains defining a plurality of grain boundaries thereof. The multi-terminal memtransistor operates much like a neuron by performing both memory and information processing, and can be a foundational circuit element for new forms of neuromorphic computing.
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公开(公告)号：US20210098611A1
公开(公告)日：2021-04-01
申请号：US17036428
申请日：2020-09-29
发明人： Mark C. Hersam , Vinod K. Sangwan , Hong-Sub Lee
摘要： A memtransistor includes a top gate electrode and a bottom gate electrode; a polycrystalline monolayer film formed of an atomically thin material disposed between the top gate electrode and the bottom gate electrode; and source and drain electrodes spatial-apart formed on the polycrystalline monolayer film to define a channel in the polycrystalline monolayer film between the source and drain electrodes. The top gate electrode and the bottom gate electrode are capacitively coupled with the channel.
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公开(公告)号：US10944047B2
公开(公告)日：2021-03-09
申请号：US16508464
申请日：2019-07-11
发明人： Mark C. Hersam , Vinod K. Sangwan
摘要： Thermally activated memristors from solution-processed two-dimensional (2D) semiconductors, fabricating methods and applications of the same. The memristor includes a semiconductor film formed on a nanoporous membrane, and at least two electrodes spatial-apart formed on the semiconductor film and electrically coupled with the semiconductor film to define a channel in the semiconductor film between the at least two electrodes, where the channel has one or more filaments, one or more dendrite, or a combination of them formed in the semiconductor film. The underlying switching mechanism applies generally to a range of 2D semiconductors including, but not limited to, MoS2, MoSe2, WS2, ReS2, InSe, or related 2D semiconductor materials.
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9.发明授权公开(公告)号：US09515257B2
公开(公告)日：2016-12-06
申请号：US15045822
申请日：2016-02-17
发明人： Mark C. Hersam , Vinod K. Sangwan , Deep M. Jariwala , In Soo Kim , Tobin J. Marks , Lincoln J. Lauhon
CPC分类号： H01L45/1206 , G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/15 , G11C2213/53 , H01L27/2463 , H01L45/08 , H01L45/1226 , H01L45/1253 , H01L45/142 , H01L45/143 , H01L45/1616 , H01L45/1625
摘要： In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.
摘要翻译： 在本发明的一个方面，忆阻器包括由原子薄的材料形成的单层膜，其中单层膜具有至少一个晶界（GB），第一电极和第二电极与单层膜电耦合以限定 忆阻器通道，使得至少一个GB位于忆阻器通道中，以及栅极电极与忆阻器通道电容耦合。
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10.发明公开公开(公告)号：US20240138160A1
公开(公告)日：2024-04-25
申请号：US18376040
申请日：2023-10-03
发明人： Mark C. Hersam , Xiaodong Yan , Justin H. Qian , Jiahui Ma , Vinod K. Sangwan , Han Wang
摘要： This invention in one aspect relates to a mixed-kernel heterojunction transistor, comprising a monolayer film formed of an atomically thin material, and a network of carbon nanotubes (CNTs) vertically stacked over the monolayer film to define an overlap region of the CNT network with the monolayer film, and non-overlap regions of the monolayer film and the CNT network, wherein the overlap region is a mixed-kernel van der Waals heterojunction.
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