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公开(公告)号:US12116279B2
公开(公告)日:2024-10-15
申请号:US17723595
申请日:2022-04-19
Applicant: NORTHWESTERN UNIVERSITY
Inventor: Mark C. Hersam , Qiucheng Li , Xiaolong Liu , Eden B Aklile
IPC: C01B32/182 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B35/02 , H01L21/02 , H01L21/285
CPC classification number: C01B32/182 , C01B35/023 , H01L21/02425 , H01L21/02491 , H01L21/02499 , H01L21/02516 , H01L21/02527 , H01L21/02603 , H01L21/02617 , H01L21/28506 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B2204/06 , C01B2204/20
Abstract: This invention in one aspect relates to a method of synthesizing a self-assembled mixed-dimensional heterostructure including 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). The method includes depositing boron on a substrate to grow borophene thereon at a substrate temperature in an ultrahigh vacuum (UHV) chamber; sequentially depositing 4,4″-dibromo-p-terphenyl on the borophene grown substrate at room temperature in the UHV chamber to form a composite structure; and controlling multi-step on-surface coupling reactions of the composite structure to self-assemble a borophene/graphene nanoribbon mixed-dimensional heterostructure. The borophene/aGNR lateral heterointerfaces are structurally and electronically abrupt, thus demonstrating atomically well-defined metal-semiconductor heterojunctions.
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2.
公开(公告)号:US20240138160A1
公开(公告)日:2024-04-25
申请号:US18376040
申请日:2023-10-03
Applicant: NORTHWESTERN UNIVERSITY , UNIVERSITY OF SOUTHERN CALIFORNIA
Inventor: Mark C. Hersam , Xiaodong Yan , Justin H. Qian , Jiahui Ma , Vinod K. Sangwan , Han Wang
CPC classification number: H10K19/20 , A61B5/308 , A61B5/332 , A61B5/339 , A61B5/349 , H10K19/10 , H10K85/221
Abstract: This invention in one aspect relates to a mixed-kernel heterojunction transistor, comprising a monolayer film formed of an atomically thin material, and a network of carbon nanotubes (CNTs) vertically stacked over the monolayer film to define an overlap region of the CNT network with the monolayer film, and non-overlap regions of the monolayer film and the CNT network, wherein the overlap region is a mixed-kernel van der Waals heterojunction.
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公开(公告)号:US11916234B2
公开(公告)日:2024-02-27
申请号:US16755680
申请日:2018-10-17
Applicant: NORTHWESTERN UNIVERSITY
Inventor: Mark C. Hersam , David Lam , Kan-Sheng Chen , Joohoon Kang
IPC: H01M4/58 , C01G17/00 , H01M10/0525 , H01M4/02
CPC classification number: H01M4/5815 , C01G17/00 , H01M10/0525 , C01P2002/77 , C01P2002/82 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2004/24 , C01P2006/40 , H01M2004/027
Abstract: Anhydrous liquid-phase exfoliation of germanium sulfide to provide few-layer germanium sulfide, as can be incorporated into electronic devices such as but not limited to batteries and cells comprising such materials.
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公开(公告)号:US20240059572A1
公开(公告)日:2024-02-22
申请号:US18270903
申请日:2022-01-12
Applicant: NORTHWESTERN UNIVERSITY
Inventor: Mark C. Hersam , Qiucheng Li
IPC: C01B35/02
CPC classification number: C01B35/026 , C01P2002/20 , C01P2006/80
Abstract: One aspect of this invention relates to synthesis of borophane polymorphs by hydrogenating borophene with atomic hydrogen in ultrahigh vacuum, including growing borophene on a substrate in an ultrahigh vacuum chamber; and performing hydrogenation of the borophene in situ to obtain borophane having a diverse set of borophane polymorphs. The borophane polymorphs are metallic with modified local work functions that can be reversibly returned to pristine borophene via thermal desorption of hydrogen. Hydrogenation also provides chemical passivation such that the borophane polymorphs have negligible oxidation for multiple days following ambient exposure.
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公开(公告)号:US20230087700A1
公开(公告)日:2023-03-23
申请号:US17798618
申请日:2021-01-28
Applicant: NORTHWESTERN UNIVERSITY
Inventor: Mark C. Hersam , Woo Jin Hyun
IPC: C09D11/52 , C09D11/033
Abstract: One aspect of this invention relates to hexagonal boron nitride (hBN) ionogel inks using exfoliated hBN nanoplatelets as the solid matrix. The hBN nanoplatelets are produced from bulk hBN powders by liquid-phase exfoliation, allowing printable hBN ionogel inks to be formulated following the addition of an imidazolium ionic liquid and ethyl lactate. The resulting inks are reliably printed with variable patterns and controllable thicknesses by aerosol jet printing, resulting in hBN ionogels that possess high room-temperature ionic conductivities and storage moduli of >3 mS cm-1 and >1 MPa, respectively. By integrating the hBN ionogel with printed semiconductors and electrical contacts, fully-printed thin-film transistors with operating voltages below 1 V are demonstrated on polyimide films. These devices exhibit desirable electrical performance and robust mechanical tolerance against repeated bending cycles, thus confirming the suitability of hBN ionogels for printed and flexible electronics.
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公开(公告)号:US20230065149A1
公开(公告)日:2023-03-02
申请号:US17968180
申请日:2022-10-18
Applicant: NORTHWESTERN UNIVERSITY
Inventor: Mark C. Hersam , Woo Jin Hyun , Lindsay E. Chaney
IPC: H01M10/0565 , H01M10/0525 , H01M10/0585 , H01M4/62
Abstract: One aspect of the invention relates to an ionogel electrolyte ink including an ionic liquid; and a gelling matrix material. The gelling matrix material is mixed with the ionic liquid in at least one solvent.
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公开(公告)号:US20230008590A1
公开(公告)日:2023-01-12
申请号:US17723595
申请日:2022-04-19
Applicant: NORTHWESTERN UNIVERSITY
Inventor: Mark C. Hersam , Qiucheng Li , Xiaolong Liu , Eden B Aklile
IPC: C01B32/184 , H01L21/02 , H01L21/285 , C01B35/02
Abstract: This invention in one aspect relates to a method of synthesizing a self-assembled mixed-dimensional heterostructure including 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). The method includes depositing boron on a substrate to grow borophene thereon at a substrate temperature in an ultrahigh vacuum (UHV) chamber; sequentially depositing 4,4″-dibromo-p-terphenyl on the borophene grown substrate at room temperature in the UHV chamber to form a composite structure; and controlling multi-step on-surface coupling reactions of the composite structure to self-assemble a borophene/graphene nanoribbon mixed-dimensional heterostructure. The borophene/aGNR lateral heterointerfaces are structurally and electronically abrupt, thus demonstrating atomically well-defined metal-semiconductor heterojunctions.
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公开(公告)号:US20230004803A1
公开(公告)日:2023-01-05
申请号:US17939057
申请日:2022-09-07
Inventor: Mark C. Hersam , Jiangtan Yuan , Stephanie E. Liu , Vinod K. Sangwan , Amit R. Trivedi
Abstract: This invention relates to memtransistors, fabricating methods and applications of the same. The memtransistor includes a polycrystalline monolayer film of an atomically thin material. The polycrystalline monolayer film is grown directly on a sapphire substrate and transferred onto an SiO2/Si substrate; and a gate electrode defined on the SiO2/Si substrate; and source and drain electrodes spatially-apart formed on the polycrystalline monolayer film to define a channel region in the polycrystalline monolayer film therebetween. The gate electrode is capacitively coupled with the channel region.
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9.
公开(公告)号:US20220209293A1
公开(公告)日:2022-06-30
申请号:US17613166
申请日:2020-05-18
Applicant: NORTHWESTERN UNIVERSITY
Inventor: Mark C. Hersam , Woo Jin Hyun
IPC: H01M10/0565 , H01M10/0525 , H01M4/485 , H01M4/583 , H01M4/38 , H01M4/525 , H01M4/505
Abstract: This invention discloses high-modulus, ion-conductive gel electrolytes and methods of making the gel electrolytes and electrochemical devices. The gel electrolytes include an ionic liquid and nanosheets mixed in the ionic liquid. The nanosheets in one example include exfoliated hexagonal boron nitride (hBN) nanosheets. Compared to conventional bulk hBN microparticles, exfoliated hBN nanosheets improve the mechanical properties of the gel electrolytes by about 2 orders of magnitude, while retaining high ionic conductivity at room temperature. Moreover, exfoliated hBN nanosheets are compatible with high-voltage cathodes, and impart exceptional thermal stability that allows high-rate operation of solid-state rechargeable lithium-ion batteries at high temperatures.
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10.
公开(公告)号:US20210344036A1
公开(公告)日:2021-11-04
申请号:US17369058
申请日:2021-07-07
Applicant: NORTHWESTERN UNIVERSITY
Inventor: Mark C. Hersam , Kan-Sheng Chen , Ethan B. Secor
IPC: H01M10/0525 , H01M4/505 , H01M4/04 , H01M4/1393 , H01M4/131 , H01M4/133 , H01M4/134 , H01M4/62 , H01M4/139 , H01M4/136
Abstract: Composites comprising anode and cathode active materials conformally coupled to few-layered graphene, corresponding electrodes and related methods of preparation.
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