Invention Grant
- Patent Title: Method of forming upper electrode of nanowire array
- Patent Title (中): 形成纳米线阵列上电极的方法
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Application No.: US14386863Application Date: 2012-12-21
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Publication No.: US09520211B2Publication Date: 2016-12-13
- Inventor: Woo Lee , Hee Han
- Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- Applicant Address: KR
- Assignee: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- Current Assignee: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2012-0029236 20120322
- International Application: PCT/KR2012/011285 WO 20121221
- International Announcement: WO2013/141469 WO 20130926
- Main IPC: H01R43/16
- IPC: H01R43/16 ; H01B13/00 ; B82Y10/00 ; H01L29/06 ; H01L29/16 ; H01B1/02 ; B82Y20/00 ; B82Y40/00 ; H01L29/417
Abstract:
Provided are a method of forming an upper electrode of a nanowire array and a nanowire array having an upper electrode formed thereon. The method includes a step of placing a polymeric thin film layer, a step of pressing, a step of treating a mixed solution, a step of etching, and a step of depositing an electrode material, such that the upper electrode is reliably formed in a state in which the polymeric thin film layer is formed on a portion of the nanowire, thereby making it possible to implement various nano-devices based on the nanowire array aligned on a substrate having a large area.
Public/Granted literature
- US20150083467A1 METHOD OF FORMING UPPER ELECTRODE OF NANOWIRE ARRAY AND NANOWIRE ARRAY WITH UPPER ELECTRODE FORMED Public/Granted day:2015-03-26
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