发明授权
US09520446B2 Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
有权
用于高密度RRAM和MRAM的4F2驱动器形成的创新方法
- 专利标题: Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
- 专利标题(中): 用于高密度RRAM和MRAM的4F2驱动器形成的创新方法
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申请号: US14450809申请日: 2014-08-04
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公开(公告)号: US09520446B2公开(公告)日: 2016-12-13
- 发明人: Yu-Wei Ting , Chi-Wen Liu , Chun-Yang Tsai , Kuo-Ching Huang
- 申请人: Taiwan Semiconductor Manufacturing Co. Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Associates, LLC
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L27/24 ; H01L27/22
摘要:
Some embodiments of the present disclosure relate to a memory array comprising memory cells having vertical gate-all-around (GAA) selection transistors. In some embodiments, the memory array has a source region disposed within an upper surface of a semiconductor body, and a semiconductor pillar of semiconductor material extending outward from the upper surface of the semiconductor body and having a channel region and an overlying drain region. A gate region vertically overlies the source region at a position laterally separated from sidewalls of the channel region by a gate dielectric layer. A first metal contact couples the drain region to a data storage element that stores data. The vertical GAA selection transistors provide for good performance, while decreasing the size of the selection transistor relative to a planar MOSFET, so that the selection transistors do not negatively impact the size of the memory array.