Invention Grant
US09520854B2 Tunable capacitor integrated on one semiconductor die or on one module
有权
集成在一个半导体管芯上或一个模块上的可调电容器
- Patent Title: Tunable capacitor integrated on one semiconductor die or on one module
- Patent Title (中): 集成在一个半导体管芯上或一个模块上的可调电容器
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Application No.: US14013235Application Date: 2013-08-29
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Publication No.: US09520854B2Publication Date: 2016-12-13
- Inventor: Bonkee Kim , Youngho Cho , Donggu Im , Bumkyum Kim
- Applicant: HiDeep Inc
- Applicant Address: KR Gyeonggi-do
- Assignee: HiDeep Inc.
- Current Assignee: HiDeep Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Foley & Lardner LLP
- Priority: KR10-2012-0034574 20120403
- Main IPC: H03H11/28
- IPC: H03H11/28 ; H03H7/38 ; H01L27/02 ; H01L23/64 ; H01L23/66
Abstract:
Disclosed is a tunable capacitor. The tunable capacitor according to a first embodiment of the present invention includes: a first capacitor; and a switching transistor which switches on/off the connection of the first capacitor between the first terminal and the second terminal, wherein an on/off operation of the switching transistor is performed by a high signal H and a low signal L. The tunable capacitor according to a second embodiment of the present invention includes: a first capacitor; and a switching transistor which switches on/off the connection of the first capacitor between the first terminal and the second terminal, wherein an on/off operation of the switching transistor is performed by a high signal H and a low signal L, and wherein the tunable capacitor is integrated on one semiconductor die or on one module.
Public/Granted literature
- US20140002208A1 TUNABLE CAPACITOR Public/Granted day:2014-01-02
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