Abstract:
Disclosed is a tunable capacitor. The tunable capacitor according to a first embodiment of the present invention includes: a variable capacitor unit placed between a first terminal and a second terminal; and a bypass switch which on/off controls a bypass connection between the first terminal and the second terminal, wherein the variable capacitor unit and the bypass switch are integrated on one semiconductor die or on one module. The tunable capacitor according to a second embodiment of the present invention includes: a variable capacitor unit placed between a first terminal and a second terminal; an impedance tuner placed between aground terminal and either the first terminal or the second terminal; and a tuning switch which on/off controls the connection between the variable capacitor unit and an impedance tuner, wherein the variable capacitor unit, the impedance tuner and the tuning switch are integrated on one semiconductor die or on one module.
Abstract:
Disclosed is a tunable capacitor which includes: a variable capacitor unit placed between a first terminal and a second terminal; and an ESD protection circuit which is inserted either between the first terminal and a ground terminal or between the second terminal and the ground terminal, or is inserted both between the first terminal and a ground terminal and between the second terminal and the ground terminal.
Abstract:
Disclosed is a voltage level converter that includes: a first conversion unit which receives at least one input signal of a logic 1 signal and a logic 0 signal from a signal input terminal and converts the signal; a second conversion unit and a third conversion unit which alternately output a logic −1 signal and the logic 1 signal respectively in accordance with the input signal; a fourth conversion unit and a fifth conversion unit which alternately output the logic −1 signal and the logic 0 signal respectively in accordance with the input signal; and a latch which has a complementary characteristic in which if a first transistor becomes an on-state, then a second transistor becomes an off-state in accordance with the input signal, and performs a positive feedback operation. A drain output of the first transistor is input to the fourth conversion unit. A drain output of the second transistor is input to the fifth conversion unit.
Abstract:
Disclosed is a tunable capacitor. The tunable capacitor according to a first embodiment of the present invention includes: a first capacitor; and a switching transistor which switches on/off the connection of the first capacitor between the first terminal and the second terminal, wherein an on/off operation of the switching transistor is performed by a high signal H and a low signal L. The tunable capacitor according to a second embodiment of the present invention includes: a first capacitor; and a switching transistor which switches on/off the connection of the first capacitor between the first terminal and the second terminal, wherein an on/off operation of the switching transistor is performed by a high signal H and a low signal L, and wherein the tunable capacitor is integrated on one semiconductor die or on one module.
Abstract:
Disclosed is a low power RF switch, and more particularly, disclosed is a low power RF switch which does not use a negative voltage when being driven. The low power RF switch includes: a switch unit which including a transistor which receives a high (H) control signal or a low (L) control signal and switches a signal flowing from one end to the other end thereof; a first voltage maintenance unit maintaining a constant voltage to one end of the transistor; and a second voltage maintenance unit maintaining a constant voltage to the other end of the transistor.