发明授权
- 专利标题: Vacuum film formation method and laminate obtained by the method
- 专利标题(中): 通过该方法获得真空成膜方法和层压体
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申请号: US13458640申请日: 2012-04-27
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公开(公告)号: US09523147B2公开(公告)日: 2016-12-20
- 发明人: Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
- 申请人: Tomotake Nashiki , Yoshimasa Sakata , Hideo Sugawara , Kenkichi Yagura , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
- 申请人地址: JP Ibaraki-Shi, Osaka
- 专利权人: NITTO DENKO CORPORATION
- 当前专利权人: NITTO DENKO CORPORATION
- 当前专利权人地址: JP Ibaraki-Shi, Osaka
- 代理机构: Hauptman Ham, LLP
- 优先权: JP2011-100509 20110428; JP2012-068801 20120326
- 主分类号: C23C14/56
- IPC分类号: C23C14/56 ; C23C14/08 ; C23C14/14 ; C23C14/34 ; H01L21/67
摘要:
A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.
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