Invention Grant
- Patent Title: Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion
- Patent Title (中): 差动磁隧道结对包括具有高矫顽力部分的感应层
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Application No.: US14460626Application Date: 2014-08-15
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Publication No.: US09524765B2Publication Date: 2016-12-20
- Inventor: Yu Lu , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L27/22 ; G11C7/24
Abstract:
An apparatus includes a first magnetic tunnel junction (MTJ) device of a differential MTJ pair. The apparatus further includes a second MTJ device of the differential MTJ pair. The first MTJ device includes a sense layer having a high coercivity portion.
Public/Granted literature
- US20160049185A1 DIFFERENTIAL MAGNETIC TUNNEL JUNCTION PAIR INCLUDING A SENSE LAYER WITH A HIGH COERCIVITY PORTION Public/Granted day:2016-02-18
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