Invention Grant
- Patent Title: Method for fabricating specific termination angles in titanium tungsten layers
- Patent Title (中): 在钛钨层中制造特定端接角的方法
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Application No.: US14700937Application Date: 2015-04-30
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Publication No.: US09524881B2Publication Date: 2016-12-20
- Inventor: Neng Jiang , Maciej Blasiak , Nicholas S. Dellas , Brian E. Goodlin
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Daniel Chan; Frank D. Cimino
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/3213 ; H01L21/3205 ; H01L29/06

Abstract:
Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.
Public/Granted literature
- US20160322235A1 METHOD FOR FABRICATING SPECIFIC TERMINATION ANGLES IN TITANIUM TUNGSTEN LAYERS Public/Granted day:2016-11-03
Information query
IPC分类: