Invention Grant
US09524881B2 Method for fabricating specific termination angles in titanium tungsten layers 有权
在钛钨层中制造特定端接角的方法

Method for fabricating specific termination angles in titanium tungsten layers
Abstract:
Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.
Information query
Patent Agency Ranking
0/0