公开(公告)号：US09524881B2

公开(公告)日：2016-12-20

申请号：US14700937

申请日：2015-04-30

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Maciej Blasiak ,  Nicholas S. Dellas ,  Brian E. Goodlin

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3213 ,  H01L21/3205 ,  H01L29/06

CPC classification number: H03H9/02015 ,  H01L21/32056 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/0657 ,  H01L29/41725 ,  H03H3/02 ,  H03H9/02102 ,  H03H9/02133 ,  H03H9/175 ,  H03H9/178 ,  H03H2003/025

Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.

Abstract translation: 在钛钨层中形成终止角的方法包括提供钛钨层并将抗蚀剂材料施加到钛钨层上。 光抗蚀剂材料在散焦条件下曝光以产生抗蚀剂掩模，其中曝光的光刻胶材料的边缘对应于倾斜端接。 用蚀刻材料蚀刻钛钨层，其中蚀刻材料至少部分地蚀刻在散焦状态下暴露的光致抗蚀剂材料，并且其中蚀刻导致钛钨层中的倾斜终止。

公开(公告)号：US20160322235A1

公开(公告)日：2016-11-03

申请号：US14700937

申请日：2015-04-30

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Maciej Blasiak ,  Nicholas S. Dellas ,  Brian E. Goodlin

IPC: H01L21/3213 ,  H01L29/06 ,  H01L21/3205

CPC classification number: H03H9/02015 ,  H01L21/32056 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/0657 ,  H01L29/41725 ,  H03H3/02 ,  H03H9/02102 ,  H03H9/02133 ,  H03H9/175 ,  H03H9/178 ,  H03H2003/025

Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.

Abstract translation: 在钛钨层中形成终止角的方法包括提供钛钨层并将抗蚀剂材料施加到钛钨层上。 光抗蚀剂材料在散焦条件下曝光以产生抗蚀剂掩模，其中曝光的光刻胶材料的边缘对应于倾斜端接。 用蚀刻材料蚀刻钛钨层，其中蚀刻材料至少部分地蚀刻在散焦状态下暴露的光致抗蚀剂材料，并且其中蚀刻导致钛钨层中的倾斜终止。

公开(公告)号：US09304283B2

公开(公告)日：2016-04-05

申请号：US14533967

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Joel Soman ,  Neng Jiang ,  Scott Summerfelt ,  Thomas Warren Lassiter ,  Nayeemuddin Mohammed ,  Mary Alyssa Drummond Roby

IPC: G02B7/09 ,  H01L21/3213 ,  H04N5/232 ,  C23F1/00

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.

Abstract translation: 一种装置包括由绝缘材料（例如压电材料）隔开的第一和第二电极。 该装置还包括在第一和第二电极上的保护层。 保护层具有暴露第一电极的一部分的第一开口和暴露第二电极的一部分的第二开口。 该装置还包括至少部分地在第一开口内并且电耦合到第一电极的第一电接触。 此外，该装置包括至少部分地在第二开口内并电耦合到第二电极的第二电接触。 第一和第二电触点中的每一个包括一叠金属层。 金属层的叠层包括氮化钛层，氮化钛层上的钛层和氮化钛层和钛层上的铝铜层。

公开(公告)号：US10319899B2

公开(公告)日：2019-06-11

申请号：US15669309

申请日：2017-08-04

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/187 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US10009001B2

公开(公告)日：2018-06-26

申请号：US15349207

申请日：2016-11-11

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Maciej Blasiak ,  Nicholas S. Dellas ,  Brian E. Goodlin

IPC: H01L41/083 ,  H03H9/02 ,  H01L21/3213 ,  H01L21/3205 ,  H01L29/06 ,  H03H3/02 ,  H03H9/17

CPC classification number: H03H9/02015 ,  H01L21/32056 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/0657 ,  H01L29/41725 ,  H03H3/02 ,  H03H9/02102 ,  H03H9/02133 ,  H03H9/175 ,  H03H9/178 ,  H03H2003/025

Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.

公开(公告)号：US20150378127A1

公开(公告)日：2015-12-31

申请号：US14533947

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson ,  Jeff W. Ritchison ,  Neng Jiang

IPC: G02B7/04 ,  G02B7/09 ,  B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00523 ,  B81B3/0021 ,  B81B3/0072 ,  B81B7/02 ,  B81C1/00349 ,  B81C2201/0174 ,  G02B13/14 ,  G02B26/06

Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.

Abstract translation: 一种装置包括形成透镜的透镜材料。 该装置还包括在透镜材料上的压电电容器，其中压电电容器被配置为响应于压电电容器两端的电压而改变透镜材料的形状，从而改变透镜的焦点。 该装置还包括在透镜材料的一部分上方以及压电电容器的至少一部分上的至少一个应力补偿环。 所述至少一个应力补偿环被配置为至少部分地减少由于在所述透镜材料上或所述透镜材料中的应力引起的所述透镜材料的弯曲。

公开(公告)号：US20150338604A1

公开(公告)日：2015-11-26

申请号：US14533967

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Joel Soman ,  Neng Jiang ,  Scott Summerfelt ,  Thomas Warren Lassiter ,  Nayeemuddin Mohammed ,  Mary Alyssa Drummond Roby

IPC: G02B7/09 ,  C23F1/00 ,  H04N5/232

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.

Abstract translation: 一种装置包括由绝缘材料（例如压电材料）隔开的第一和第二电极。 该装置还包括在第一和第二电极上的保护层。 保护层具有暴露第一电极的一部分的第一开口和暴露第二电极的一部分的第二开口。 该装置还包括至少部分地在第一开口内并且电耦合到第一电极的第一电接触。 此外，该装置包括至少部分地在第二开口内并电耦合到第二电极的第二电接触。 第一和第二电触点中的每一个包括一叠金属层。 金属层的叠层包括氮化钛层，氮化钛层上的钛层和氮化钛层和钛层上的铝铜层。

公开(公告)号：US09755139B2

公开(公告)日：2017-09-05

申请号：US14738847

申请日：2015-06-13

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/22 ,  H01L41/332 ,  H01L41/187

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US20170063325A1

公开(公告)日：2017-03-02

申请号：US15349207

申请日：2016-11-11

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Maciej Blasiak ,  Nicholas S. Dellas ,  Brian E. Goodlin

IPC: H03H9/02 ,  H03H9/17

CPC classification number: H03H9/02015 ,  H01L21/32056 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/0657 ,  H01L29/41725 ,  H03H3/02 ,  H03H9/02102 ,  H03H9/02133 ,  H03H9/175 ,  H03H9/178 ,  H03H2003/025

Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.

Abstract translation: 在钛钨层中形成终止角的方法包括提供钛钨层并将抗蚀剂材料施加到钛钨层上。 光抗蚀剂材料在散焦条件下曝光以产生抗蚀剂掩模，其中曝光的光刻胶材料的边缘对应于倾斜端接。 用蚀刻材料蚀刻钛钨层，其中蚀刻材料至少部分地蚀刻在散焦状态下暴露的光致抗蚀剂材料，并且其中蚀刻导致钛钨层中的倾斜终止。

公开(公告)号：US20160300693A1

公开(公告)日：2016-10-13

申请号：US14682651

申请日：2015-04-09

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Elizabeth Costner Stewart ,  Nicholas S. Dellas

IPC: H01J37/32 ,  H03H3/02

CPC classification number: H03H3/02 ,  H03H2003/025

Abstract: A method of fabricating a sloped termination of a molybdenum layer includes providing the molybdenum layer and applying a photo resist material to the molybdenum layer. The photo resist material is exposed under a defocus condition to generate a resist mask having an edge portion. The molybdenum layer is etched at least at the edge portion of the resist mask to result in a sloped termination of the molybdenum layer.

Abstract translation: 制造钼层的倾斜终端的方法包括提供钼层并将光抗蚀剂材料施加到钼层。 光抗蚀剂材料在散焦条件下曝光以产生具有边缘部分的抗蚀剂掩模。 至少在抗蚀剂掩模的边缘部分处蚀刻钼层，导致钼层的倾斜终止。