- 专利标题: Semiconductor device with combined passive device on chip back side
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申请号: US14791051申请日: 2015-07-02
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公开(公告)号: US09524932B2公开(公告)日: 2016-12-20
- 发明人: Andreas Munding , Martin Gruber
- 申请人: Infineon Technologies Austria AG
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 代理机构: Shumaker & Sieffert, P.A.
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L29/08 ; H01L21/02 ; H01L21/20 ; H01L23/498 ; H01L49/02 ; H01L23/64 ; H01L27/06 ; H01L21/283 ; H01L21/52 ; H01L23/495 ; H01L27/15 ; H01L29/772 ; H01L33/38 ; H01L33/48 ; H01L25/16
摘要:
Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second side is opposite the first side. The semiconductor chip further includes a semiconductor device formed on the first side of the substrate and an electrically insulating layer formed on at least a portion of the second side of the substrate. The semiconductor chip further includes a capacitor device formed on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the capacitor device is electrically insulated from the semiconductor device.
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