Invention Grant
- Patent Title: Reduced area power devices using deep trench isolation
- Patent Title (中): 减少区域功率器件采用深沟槽隔离
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Application No.: US14563028Application Date: 2014-12-08
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Publication No.: US09525060B2Publication Date: 2016-12-20
- Inventor: Yongxi Zhang , Sameer Pendharkar , Seetharaman Sridhar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L21/762 ; H01L29/06 ; H01L29/08
Abstract:
An integrated circuit including an isolated device which is isolated with a lower buried layer combined with deep trench isolation. An upper buried layer, with the same conductivity type as the substrate, is disposed over the lower buried layer, so that electrical contact to the lower buried layer is made at a perimeter of the isolated device. The deep trench isolation laterally surrounds the isolated device. Electrical contact to the lower buried layer sufficient to maintain a desired bias to the lower buried layer is made along less than half of the perimeter of the isolated device, between the upper buried layer and the deep trench.
Public/Granted literature
- US20150171211A1 REDUCED AREA POWER DEVICES USING DEEP TRENCH ISOLATION Public/Granted day:2015-06-18
Information query
IPC分类:
