Invention Grant
US09530478B2 Memory device using spin hall effect and methods of manufacturing and operating the memory device 有权
使用旋转霍尔效应的存储器件以及制造和操作存储器件的方法

Memory device using spin hall effect and methods of manufacturing and operating the memory device
Abstract:
A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.
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