Invention Grant
US09530478B2 Memory device using spin hall effect and methods of manufacturing and operating the memory device
有权
使用旋转霍尔效应的存储器件以及制造和操作存储器件的方法
- Patent Title: Memory device using spin hall effect and methods of manufacturing and operating the memory device
- Patent Title (中): 使用旋转霍尔效应的存储器件以及制造和操作存储器件的方法
-
Application No.: US14162144Application Date: 2014-01-23
-
Publication No.: US09530478B2Publication Date: 2016-12-27
- Inventor: Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
- Applicant: Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce P.L.C.
- Priority: KR10-2013-0008630 20130125
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/08 ; H01L27/22 ; G11C11/18

Abstract:
A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.
Public/Granted literature
- US20140211552A1 MEMORY DEVICE USING SPIN HALL EFFECT AND METHODS OF MANUFACTURING AND OPERATING THE MEMORY DEVICE Public/Granted day:2014-07-31
Information query