Method of modifying epitaxial growth shape on source drain area of transistor

Invention Grant

US09530661B2 Method of modifying epitaxial growth shape on source drain area of transistor 有权

Title translation: 修改晶体管源漏区外延生长形状的方法

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Patent Title: Method of modifying epitaxial growth shape on source drain area of transistor
Patent Title (中): 修改晶体管源漏区外延生长形状的方法
Application No.: US14799387

Application Date: 2015-07-14
Publication No.: US09530661B2

Publication Date: 2016-12-27
Inventor: Yihwan Kim , Xuebin Li , Abhishek Dube
Applicant: Applied Materials, Inc.
Applicant Address: US CA Santa Clara
Assignee: APPLIED MATERIALS, INC.
Current Assignee: APPLIED MATERIALS, INC.
Current Assignee Address: US CA Santa Clara
Agency: Patterson & Sheridan, LLP
Main IPC: H01L21/308
IPC: H01L21/308 ; H01L21/02 ; H01L21/8234 ; H01L29/08 ; H01L29/66

Method of modifying epitaxial growth shape on source drain area of transistor

Abstract:

Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

Abstract(Chinese):

提供了诸如FinFET的半导体器件的形成方法。在半导体翅片上形成外延膜，外延膜包括具有两个面的顶面。覆盖层沉积在顶表面上，并且外延膜的横向方向的部分被去除。具有较小的横向尺寸防止外延膜与相邻的外延膜合并并在外延膜和相邻的外延膜之间产生间隙。

Public/Granted literature

US20160042963A1 METHOD OF MODIFYING EPITAXIAL GROWTH SHAPE ON SOURCE DRAIN AREA OF TRANSISTOR Public/Granted day:2016-02-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）