公开(公告)号：US09673277B2

公开(公告)日：2017-06-06

申请号：US14885521

申请日：2015-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Adam Brand ,  Bingxi Sun Wood ,  Naomi Yoshida ,  Lin Dong ,  Shiyu Sun ,  Chi-Nung Ni ,  Yihwan Kim

IPC: H01L29/06 ,  H01L29/20 ,  H01L29/66 ,  H01L21/762 ,  H01L21/306

CPC classification number: H01L29/0673 ,  H01L21/30612 ,  H01L21/76224 ,  H01L29/20 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/78696

Abstract: A method of forming a semiconductor device includes: forming a superlattice structure atop the top surface of a substrate, wherein the superlattice structure comprises a plurality of first layers and a corresponding plurality of second layers alternatingly arranged in a plurality of stacked pairs; forming a lateral etch stop layer by epitaxial deposition of a material of the first layer or the second layer of the superlattice structure atop a sidewall of the superlattice structure, or by selectively oxidizing edges of the first layers and second layers of the superlattice structure; subsequently forming a source region adjacent a first end of the superlattice structure and a drain region adjacent a second opposing end of the superlattice structure; and selectively etching the superlattice structure to remove each of the first layers or each of the second layers to form a plurality of voids in the superlattice structure.

公开(公告)号：US08999821B2

公开(公告)日：2015-04-07

申请号：US14269417

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Adam Brand ,  Bingxi Wood ,  Errol Sanchez ,  Yihwan Kim ,  Yi-Chiau Huang ,  John Boland

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/0262 ,  H01L29/66795

Abstract: Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxial layer leaves a gap between adjacent columns of the patterned mandrel, and a dielectric material may be deposited in the gap between the adjacent columns of the patterned mandrel. The methods may also include planarizing the epitaxial layer to form a planarized epitaxial layer and exposing the columns of the patterned mandrel, and etching at least a portion of the exposed columns of the patterned mandrel and the dielectric material to expose at least a portion of the planarized epitaxial layer that forms the fin structure.

Abstract translation: 描述形成场效应晶体管的鳍结构的方法。 所述方法可以包括将芯棒图案化在衬底的表面上，以及在图案化心轴的暴露表面上沉积高迁移率沟道材料外延层的操作。 外延层在图案化心轴的相邻列之间留下间隙，并且介电材料可以沉积在图案化心轴的相邻列之间的间隙中。 所述方法还可以包括平坦化外延层以形成平坦化的外延层并暴露图案化心轴的列，以及蚀刻图案化心轴和电介质材料的暴露的柱的至少一部分，以暴露出至少一部分 形成翅片结构的平坦化外延层。

公开(公告)号：US10260164B2

公开(公告)日：2019-04-16

申请号：US15595079

申请日：2017-05-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Nyi O. Myo ,  Kevin Bautista ,  Zhiyuan Ye ,  Schubert S. Chu ,  Yihwan Kim

IPC: C30B25/10 ,  C30B25/12 ,  C23C16/458 ,  H01L21/687

Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.

公开(公告)号：US09460918B2

公开(公告)日：2016-10-04

申请号：US14133148

申请日：2013-12-18

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L21/02532 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/78

Abstract: Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.

Abstract translation: 本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。 所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。 硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。 大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。 由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

公开(公告)号：US20150050800A1

公开(公告)日：2015-02-19

申请号：US14269417

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Adam Brand ,  Bingxi Wood ,  Errol Sanchez ,  Yihwan Kim ,  Yi-Chiau Huang ,  John Boland

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/0262 ,  H01L29/66795

Abstract: Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxial layer leaves a gap between adjacent columns of the patterned mandrel, and a dielectric material may be deposited in the gap between the adjacent columns of the patterned mandrel. The methods may also include planarizing the epitaxial layer to form a planarized epitaxial layer and exposing the columns of the patterned mandrel, and etching at least a portion of the exposed columns of the patterned mandrel and the dielectric material to expose at least a portion of the planarized epitaxial layer that forms the fin structure.

Abstract translation: 描述形成场效应晶体管的鳍结构的方法。 所述方法可以包括将芯棒图案化在衬底的表面上，以及在图案化心轴的暴露表面上沉积高迁移率沟道材料外延层的操作。 外延层在图案化心轴的相邻列之间留下间隙，并且介电材料可以沉积在图案化心轴的相邻列之间的间隙中。 所述方法还可以包括平坦化外延层以形成平坦化的外延层并暴露图案化心轴的列，以及蚀刻图案化心轴和电介质材料的暴露的柱的至少一部分，以暴露出至少一部分 形成翅片结构的平坦化外延层。

公开(公告)号：US10731272B2

公开(公告)日：2020-08-04

申请号：US16282576

申请日：2019-02-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Nyi O. Myo ,  Kevin Bautista ,  Zhiyuan Ye ,  Schubert S. Chu ,  Yihwan Kim

IPC: C30B25/10 ,  C30B25/12 ,  C23C16/458 ,  H01L21/687

Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support including a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.

公开(公告)号：US09805942B2

公开(公告)日：2017-10-31

申请号：US15384051

申请日：2016-12-19

Applicant: Applied Materials, Inc.

Inventor： Yihwan Kim ,  Xuebin Li ,  Abhishek Dube

IPC: H01L21/308 ,  H01L21/02 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L21/3083 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/823431 ,  H01L29/0847 ,  H01L29/66795

Abstract: Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

公开(公告)号：US09721792B2

公开(公告)日：2017-08-01

申请号：US14465330

申请日：2014-08-21

Applicant: Applied Materials, Inc.

Inventor： Yi-Chiau Huang ,  Yihwan Kim

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02587 ,  H01L21/0237 ,  H01L21/02373 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02524 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02617 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/67115

Abstract: Implementations described herein generally relate to methods for relaxing strain in thin semiconductor films grown on another semiconductor substrate that has a different lattice constant. Strain relaxation typically involves forming a strain relaxed buffer layer on the semiconductor substrate for further growth of another semiconductor material on top. Whereas conventionally formed buffer layers are often thick, rough and/or defective, the strain relaxed buffer layers formed using the implementations described herein demonstrate improved surface morphology with minimal defects.

公开(公告)号：US09704708B2

公开(公告)日：2017-07-11

申请号：US14794914

申请日：2015-07-09

Applicant: Applied Materials, Inc.

Inventor： Abhishek Dube ,  Yihwan Kim ,  Xuebin Li

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/24 ,  H01L21/3213

CPC classification number: H01L21/02579 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/32135

Abstract: A method for forming a film on a substrate is provided. The method includes positioning a substrate within a processing volume of a process chamber and heating the substrate. The method further includes forming a semiconductor film on the substrate by exposing the substrate to two or more reactants including a silicon source and a halogenated dopant source. The semiconductor film includes one or more epitaxial regions and one or more non-epitaxial regions.

公开(公告)号：US09530661B2

公开(公告)日：2016-12-27

申请号：US14799387

申请日：2015-07-14

Applicant: Applied Materials, Inc.

Inventor： Yihwan Kim ,  Xuebin Li ,  Abhishek Dube

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L21/3083 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/823431 ,  H01L29/0847 ,  H01L29/66795

Abstract: Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

Abstract translation: 提供了诸如FinFET的半导体器件的形成方法。 在半导体翅片上形成外延膜，外延膜包括具有两个面的顶面。 覆盖层沉积在顶表面上，并且外延膜的横向方向的部分被去除。 具有较小的横向尺寸防止外延膜与相邻的外延膜合并并在外延膜和相邻的外延膜之间产生间隙。