Aging effects on devices fabricated using deep nanometer complementary metal-oxide semiconductor (CMOS) processes can cause circuits to exhibit an undesirable mismatch buildup over time. To address the aging effects, the connections to an array of M differential circuits are controlled to limit and systematically minimize or reverse the aging effects. In one embodiment, the controlling permutation sequence is selected to stress the array of M differential circuits under opposite stress conditions during at least two different time periods. Imposing opposite stress conditions, preferably substantially equal opposite stress conditions, can reverse the direction of a mismatch buildup and limit the mismatch buildup over time within acceptable limits. The controlling permutation sequence can be applied to an array of comparators of an analog-to-digital converter, or an array of differential amplifiers of a folding analog-to-digital converter.