Invention Grant
US09533880B2 Method of fabrication of Al/Ge bonding in a wafer packaging environment and a product produced therefrom
有权
在晶片封装环境中制造Al / Ge键合的方法和由其制造的产品
- Patent Title: Method of fabrication of Al/Ge bonding in a wafer packaging environment and a product produced therefrom
- Patent Title (中): 在晶片封装环境中制造Al / Ge键合的方法和由其制造的产品
-
Application No.: US14853873Application Date: 2015-09-14
-
Publication No.: US09533880B2Publication Date: 2017-01-03
- Inventor: Steven S. Nasiri , Anthony F. Flannery, Jr.
- Applicant: InvenSense, Inc.
- Applicant Address: US CA San Jose
- Assignee: INVENSENSE, INC.
- Current Assignee: INVENSENSE, INC.
- Current Assignee Address: US CA San Jose
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/44 ; H01L21/48 ; H01L21/50 ; B81C1/00 ; H01L21/18 ; B81B3/00 ; B81C3/00 ; B23K20/02
Abstract:
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
Public/Granted literature
- US20160002029A1 METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM Public/Granted day:2016-01-07
Information query
IPC分类:
