Invention Grant
US09534981B2 Prism-coupling systems and methods for characterizing ion-exchanged waveguides with large depth-of-layer
有权
用于表征具有大深度层的离子交换波导的棱镜耦合系统和方法
- Patent Title: Prism-coupling systems and methods for characterizing ion-exchanged waveguides with large depth-of-layer
- Patent Title (中): 用于表征具有大深度层的离子交换波导的棱镜耦合系统和方法
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Application No.: US14966642Application Date: 2015-12-11
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Publication No.: US09534981B2Publication Date: 2017-01-03
- Inventor: Rostislav Vatchev Roussev , Vitor Marino Schneider , Emily Elizabeth Young
- Applicant: CORNING INCORPORATED
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Timothy M. Schaeberle
- Main IPC: G01B11/16
- IPC: G01B11/16 ; G01M11/08 ; G02B6/134 ; G02B6/34 ; G02B6/14 ; G02B6/36 ; G01L1/24 ; C03C21/00 ; G01N21/41 ; G01N21/84 ; G01B11/22 ; G01N21/23 ; G02B5/04 ; G01B11/06

Abstract:
Prism-coupling systems and methods for characterizing large depth-of-layer waveguides formed in glass substrates are disclosed. One method includes making a first measurement after a first ion-exchange process that forms a deep region and then performing a second measurement after a second ion-exchange process that forms a shallow region. Light-blocking features are arranged relative to the prism to produce a mode spectrum where the contrast of the mode lines for the strongly coupled low-order modes is improved at the expense of loss of resolution for measuring characteristics of the shallow region. Standard techniques for determining the compressive stress, the depth of layer or the tensile strength of the shallow region are then employed. A second measurement can be made using a near-IR wavelength to measure characteristics of the deeper, first ion-exchange process. Systems and methods of measuring ion-exchanged samples using shape control are also disclosed.
Public/Granted literature
- US20160178477A1 PRISM-COUPLING SYSTEMS AND METHODS FOR CHARACTERIZING ION-EXCHANGED WAVEGUIDES WITH LARGE DEPTH-OF-LAYER Public/Granted day:2016-06-23
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