发明授权
US09536985B2 Epitaxial growth of material on source/drain regions of FinFET structure
有权
FinFET结构的源极/漏极区的材料的外延生长
- 专利标题： Epitaxial growth of material on source/drain regions of FinFET structure
- 专利标题（中）： FinFET结构的源极/漏极区的材料的外延生长
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申请号： US14499356申请日： 2014-09-29
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公开(公告)号： US09536985B2公开(公告)日： 2017-01-03
- 发明人: Michael P. Chudzik , Brian J. Greene , Eric C. T. Harley , Judson R. Holt , Yue Ke , Rishikesh Krishnan , Renee T. Mo , Yinxiao Yang
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Yuanmin Cai, Esq.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A method for producing a semiconductor structure, as well as a semiconductor structure, that uses a partial removal of an insulating layer around a semiconductor fin, and subsequently epitaxially growing an additional semiconductor material in the exposed regions, while maintaining the shape of the fin with the insulating layer.
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