Invention Grant
- Patent Title: Photovoltaic devices including MG-doped semiconductor films
- Patent Title (中): 包括掺杂有MG的半导体膜的光伏器件
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Application No.: US13685035Application Date: 2012-11-26
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Publication No.: US09537039B2Publication Date: 2017-01-03
- Inventor: Akhlesh Gupta , Ricky C. Powell , David Eaglesham
- Applicant: FIRST SOLAR, INC.
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Agency: Blank Rome LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00 ; H01L31/18 ; H01L31/0296 ; H01L31/0224

Abstract:
A photovoltaic cell can include a dopant in contact with a semiconductor layer. The photovoltaic cell can include a transparent conductive layer and a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer including magnesium. In certain circumstances, a substrate can be a glass substrate. In other circumstances, a substrate can be a metal layer. The first semiconductor layer can include CdS. The first semiconductor layer can have a thickness of between about 200 or 3000 Angstroms. The first semiconductor layer can include 1-20% magnesium. A method of manufacturing a photovoltaic cell can include providing a transparent conductive layer and depositing a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer treated with magnesium.
Public/Granted literature
- US20130143352A1 PHOTOVOLTAIC DEVICES INCLUDING MG-DOPED SEMICONDUCTOR FILMS Public/Granted day:2013-06-06
Information query
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