公开(公告)号：US20200066928A1

公开(公告)日：2020-02-27

申请号：US16665516

申请日：2019-10-28

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  Zhibo Zhao

IPC: H01L31/0224 ,  H01L31/073 ,  H01L31/0749

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

公开(公告)号：US09406829B2

公开(公告)日：2016-08-02

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US09318642B2

公开(公告)日：2016-04-19

申请号：US13678800

申请日：2012-11-16

Applicant: FIRST SOLAR, INC.

Inventor： Akhlesh Gupta ,  Markus Gloeckler ,  Ricky C. Powell

IPC: H01L31/18 ,  C23C14/12 ,  C23C14/56 ,  C23C14/06 ,  C23C14/24 ,  H01L21/02 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/1828 ,  B05B13/0221 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/56 ,  H01L21/02562 ,  H01L21/02664 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67706 ,  H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer.

Abstract translation: 公开了一种方法和装置，其中氯化镉沉积在碲化镉层上，同时热处理碲化镉层。

公开(公告)号：US10861994B2

公开(公告)日：2020-12-08

申请号：US16435838

申请日：2019-06-10

Applicant: First Solar, Inc.

Inventor： Anke Abken ,  Markus Gloeckler ,  Roger Green ,  Akhlesh Gupta ,  Upali Jayamaha ,  Peter Meyers ,  Rick Powell

IPC: H01L31/073 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0296

Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.

公开(公告)号：US10153386B2

公开(公告)日：2018-12-11

申请号：US14699574

申请日：2015-04-29

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Akhlesh Gupta

IPC: H01L31/00 ,  H01L31/0296 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/0224

Abstract: A multilayered structure may include a doped buffer layer on a transparent conductive oxide layer.

公开(公告)号：US20130189635A1

公开(公告)日：2013-07-25

申请号：US13748344

申请日：2013-01-23

Applicant: FIRST SOLAR, INC.

Inventor： Chong Lim ,  Oleh Petro Karpenko ,  Akhlesh Gupta

IPC: F27D3/00

CPC classification number: F27D3/00 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/6776

Abstract: A method and apparatus for heat treating a photovoltaic device. The apparatus includes a heating module, a processing module, and a cooling module in which the operating temperatures of the modules may be controlled separately. The heating module is configured to pre-heat a substrate and stabilize the substrate at the desired target temperature, the processing module is configured to thermally process the substrate, and the cooling module is configured for post-treatment cooling of the substrate.

Abstract translation: 一种用于热处理光伏器件的方法和装置。 该装置包括加热模块，处理模块和冷却模块，其中模块的操作温度可以分开控制。 加热模块被配置为预热基底并将基底稳定在期望的目标温度，处理模块被配置为热处理基底，并且冷却模块被配置用于对基底进行后处理冷却。

公开(公告)号：US20160197226A1

公开(公告)日：2016-07-07

申请号：US15069555

申请日：2016-03-14

Applicant: First Solar, Inc.

Inventor： Akhlesh Gupta ,  Markus Gloeckler ,  Rick C. Powell

IPC: H01L31/18 ,  B05B13/02 ,  H01L21/67 ,  H01L31/073 ,  H01L21/677

CPC classification number: H01L31/1828 ,  B05B13/0221 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/56 ,  H01L21/02562 ,  H01L21/02664 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67706 ,  H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer.

公开(公告)号：US20150236173A1

公开(公告)日：2015-08-20

申请号：US14699574

申请日：2015-04-29

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Akhlesh Gupta

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0232

CPC classification number: H01L31/02963 ,  B22F3/03 ,  B22F3/15 ,  B22F7/08 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  C23C26/00 ,  C23C28/04 ,  H01L31/022466 ,  H01L31/0232 ,  H01L31/0296 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: A multilayered structure may include a doped buffer layer on a transparent conductive oxide layer.

Abstract translation: 多层结构可以包括在透明导电氧化物层上的掺杂缓冲层。

公开(公告)号：US20150004743A1

公开(公告)日：2015-01-01

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US20150000733A1

公开(公告)日：2015-01-01

申请号：US14317433

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  Zhibo Zhao

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

Abstract translation: 对于光伏器件描述了方法和装置。 光电器件包括玻璃衬底，形成在玻璃衬底上的半导体吸收层，形成在半导体吸收层上的金属背接触层，以及由MnTe，Cd1-xMnxTe和 SnTe，设置在半导体吸收层和金属背接触层之间的缓冲层。