Invention Grant
US09542343B2 Memory modules with reduced rank loading and memory systems including same
有权
内存模块具有降低的等级加载和包含相同的内存系统
- Patent Title: Memory modules with reduced rank loading and memory systems including same
- Patent Title (中): 内存模块具有降低的等级加载和包含相同的内存系统
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Application No.: US14091385Application Date: 2013-11-27
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Publication No.: US09542343B2Publication Date: 2017-01-10
- Inventor: Jeong-Kyoum Kim , In-Dal Song , Jung-Hwan Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0037874 20130408
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/16 ; G06F13/40

Abstract:
A memory module includes memory devices arranged in ranks and columns and designated in first and second groupings, the first grouping includes memory devices arranged in only a first rank nearest a memory controller and directly connected to the memory controller, the memory devices in the second grouping are indirectly connected to the memory controller via a corresponding memory device in the first grouping arranged in a same column, and each memory device selectively provides either self-data retrieved from a constituent memory core or other-data retrieved from a memory core of another memory device during the read operation.
Public/Granted literature
- US20140149631A1 MEMORY MODULES AND MEMORY SYSTEMS INCLUDING THE SAME Public/Granted day:2014-05-29
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