A semiconductor device includes a memory cell; circuitry that generates a reference voltage; and a sense amplifier including a first input terminal electrically connected to the memory cell, and a second input terminal electrically connected to the circuitry. The sense amplifier obtains a value in correlation with a resistance value of the memory cell based on a comparison between a sense voltage applied to the first input terminal and the reference voltage applied to the second input terminal. The sense voltage changes at a speed in correlation with the resistance value of the memory cell. In at least part of a period during which the sense voltage changes, the circuitry causes the reference voltage to change in a direction opposite to a direction in which the sense voltage changes.