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US09543357B2 Magnetoresistive random access memory devices and methods of manufacturing the same 有权
磁阻随机存取存储器件及其制造方法

Magnetoresistive random access memory devices and methods of manufacturing the same
摘要：
An MRAM device comprises an insulating interlayer comprising a flat first upper surface on a first region and a second region of a substrate. A pattern structure comprising pillar-shaped magnetic tunnel junction (MTJ) structures and a filling layer pattern between the MTJ structures is formed on the insulating interlayer of the first region. The pattern structure comprises a flat second upper surface that is higher than the first upper surface. Bit lines are formed on the pattern structure that contact top surfaces of the MTJ structures. An etch-stop layer is formed on the pattern structure between the bit lines of the first region and the first upper surface of the first insulating interlayer of the second region. A first portion of an upper surface of the etch-stop layer on the first region is higher than a second portion of the upper surface of the etch-stop layer on the second region.
摘要（中）：

MRAM器件包括绝缘中间层，其包括在第一区域上的平坦的第一上表面和衬底的第二区域。 在第一区域的绝缘中间层上形成包括柱形磁隧道结（MTJ）结构和MTJ结构之间的填充层图案的图案结构。 图案结构包括比第一上表面高的扁平的第二上表面。 位线形成在与MTJ结构的顶表面接触的图案结构上。 在第一区域的位线和第二区域的第一绝缘中间层的第一上表面之间的图案结构上形成蚀刻停止层。 第一区域上的蚀刻停止层的上表面的第一部分高于第二区域上的蚀刻停止层的上表面的第二部分。

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