Invention Grant
- Patent Title: Low temperature coefficient resistor in CMOS flow
- Patent Title (中): CMOS流量中的低温系数电阻
-
Application No.: US14569975Application Date: 2014-12-15
-
Publication No.: US09543374B2Publication Date: 2017-01-10
- Inventor: Greg Charles Baldwin , Kamel Benaissa , Sarah Liu , Song Zhao
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L49/02 ; H01L27/06 ; H01L21/265 ; H01L21/8238 ; H02J7/02 ; H02J7/00
Abstract:
A method for adding a low TCR resistor to a baseline CMOS manufacturing flow. A method of forming a low TCR resistor in a CMOS manufacturing flow. A method of forming an n-type and a p-type transistor with a low TCR resistor in a CMOS manufacturing flow.
Public/Granted literature
- US20150171158A1 LOW TEMPERATURE COEFFICIENT RESISTOR IN CMOS FLOW Public/Granted day:2015-06-18
Information query
